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Paper:WE2.R3.4
Session:Coding for Memories
Session Time:Wednesday, July 10, 11:40 - 13:20
Presentation Time:Wednesday, July 10, 12:40 - 13:00
Presentation: Lecture
Paper Title: Coding for Write $\ell$-step-up Memories
Authors: Yeow Meng Chee; Nanyang Technological University 
 Han Mao Kiah; Nanyang Technological University 
 A. J. Han Vinck; University of Duisburg-Essen 
 Van Khu Vu; Nanyang Technological University 
 Eitan Yaakobi; Technion - Israel Institute of Technology 
Abstract: In this work, we propose and study a new class of non-binary rewriting codes, called \emph{write $\ell$-step-up memories} (\emph{W$\ell$M}) codes. From an information-theoretic point of view, this coding scheme is a generalization of non-binary write-once memories (WOM) codes. From a practical point of view, this coding scheme can be used not only to increase the lifetime of the flash memories but also mitigate their over-shooting problem. We first provide an exact formula for the capacity region and the maximum sum-rate of W$\ell$M codes. Lastly, we present several explicit constructions of high-rate W$\ell$M codes with efficient encoding/decoding algorithms.